Rami Ahmad El-Nabulsi | Nanophotonics and Nanoelectronics | NanoPhotonics Pioneer Award

Published on by Nano Technology

Prof. Dr. Rami Ahmad El-Nabulsi | Nanophotonics and Nanoelectronics | NanoPhotonics Pioneer Award

Professor | Czech Education and Scientific Network(CESNET) | Czech Republic

Prof. Dr. Rami Ahmad El-Nabulsi is a highly prolific theoretical scientist with a distinguished global research profile reflected by 6,964 citations, 386 scholarly documents, an h-index of 43, and an i10-index of 201. His research contributions span theoretical and mathematical physics, applied mathematics, and interdisciplinary modeling, with a strong emphasis on nonlocal, fractional, and fractal frameworks. He has authored several hundred peer-reviewed journal articles published in high-impact international journals, addressing complex problems in quantum dynamics, nonlinear systems, fractal and fractional calculus, quantum field theory, condensed matter physics, superconductivity, plasma and nuclear physics, fluid dynamics, astrophysics, and space science. His work is widely recognized for introducing innovative mathematical operators, generalized Lagrangian and Hamiltonian formalisms, and fractal-based models that advance understanding of classical and quantum phenomena across multiple length scales. Prof. Dr. Rami Ahmad El-Nabulsi has also made notable contributions to applied domains including energy systems, nanomaterials, biophysics, biomedical heat transfer, geophysics, and ocean and atmospheric dynamics. In addition to extensive journal publications, his scholarly output includes books, conference proceedings, and invited research papers. He is internationally acknowledged for research excellence through prestigious awards and recognitions, serves as an editor and editorial board member for numerous reputed journals, acts as a reviewer for a very large number of international journals, and frequently contributes as a conference chair, keynote speaker, and scientific committee member, underscoring his sustained impact, innovation, and leadership in global research.

Profiles: Scopus | ORCID | Google Scholar | ResearchGate | Sci Profiles | Loop

Featured Publications

1. El-Nabulsi, R. A., & Torres, D. F. M. (2008). Fractional action-like variational problems. Journal of Mathematical Physics, 49(5), 053521.

2. El-Nabulsi, R. A. (2005). A fractional approach to non-conservative Lagrangian dynamical systems. FIZIKA A, 14(4), 289–298.

3. El-Nabulsi, R. A., & Torres, D. F. M. (2007). Necessary optimality conditions for fractional action-like integrals of variational calculus with Riemann–Liouville derivatives of order (α, β). Mathematical Methods in the Applied Sciences, 30(15), 1931–1939.

4. El-Nabulsi, R. A. (2005). A fractional action-like variational approach of some classical, quantum and geometrical dynamics. International Journal of Applied Mathematics, 17, 299–317.

5. El-Nabulsi, R. A. (2013). Non-linear dynamics with non-standard Lagrangians. Qualitative Theory of Dynamical Systems, 12(2), 273–291.

Shang Zhou | Nanophotonics and Nanoelectronics | Best Researcher Award

Published on by Nano Technology

Mr. Shang Zhou | Nanophotonics and Nanoelectronics | Best Researcher Award

Graduate Student | Gannan Medical University | China

Mr. Shang Zhou is an emerging researcher whose academic pursuits converge at the intersection of medicine, nanomaterials, and semiconductor physics. His core research focus lies in investigating contact characteristics, interface modulation, and the physical mechanisms of van der Waals heterostructures, particularly those involving graphene and gallium nitride (GaN). By integrating theoretical modeling and experimental validation, his work aims to enhance the performance of electronic and optoelectronic devices through optimized heterojunction structures. His major research contribution includes the project “Research on the Contact Characteristics of Graphene/GaN Heterojunction,” which explores how GaN crystal orientation and surface conditions influence contact behaviors in graphene-based systems. This study offers insights into the design of next-generation semiconductor and nanodevice architectures. His publication in Applied Surface Science (SCI-indexed, Vol. 713, 2025) further underscores his role in bridging fundamental materials science with practical device engineering. Mr. Shang Zhou’s innovative capacity is reflected in his extensive intellectual property portfolio, comprising 12 patents—including several invention patents on graphene/GaN interface regulation methods, semiconductor cleaning technologies, and adhesive removal techniques. His patents also extend to applied innovations such as anti-drowning self-rescue devices and photoelectric sensor systems, demonstrating his versatility and translational approach to technology development. Additionally, he holds two software copyrights related to digital safety education and dispute mediation platforms, showcasing his interdisciplinary engagement across science and societal applications. His Scopus metrics indicate 4 research documents with 3 citations and an h-index of 1, representing early yet promising contributions in high-impact research domains. Through his continuous work in nanostructured materials, heterojunction device optimization, and applied nanotechnology, Mr. Shang Zhou exemplifies a researcher dedicated to advancing the frontiers of semiconductor interface physics and nanomaterial-based biomedical engineering.

Profiles: Scopus | ORCID | Scilit

Featured Publications

1. Zhou, S., Meng, Y., Li, J., Cheng, Y., Bao, X., Wang, Z., Deng, H., Yang, Y., Chen, P., Chen, Y., Ouyang, F., Wang, Q., & Zhong, H. (2025). The impact of GaN crystal orientation on the contact properties of single-layer graphene/GaN: A theoretical and experimental study. Applied Surface Science, 713, 164305.

2. Meng, Y., Du, X., Zhou, S., Li, J., Feng, R., Zhang, H., Xu, Q., Zhao, W., Liu, Z., & Zhong, H. (2024). Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells. Molecules, 29(18), 4439.