Sunkook Kim | Nanophotonics and Nanoelectronics | Best Researcher Award

Published on by Nano Technology

Prof. Dr. Sunkook Kim | Nanophotonics and Nanoelectronics | Best Researcher Award

Professor | Sungkyunkwan University | South Korea

Prof. Dr. Sunkook Kim is an internationally recognized scientist whose pioneering contributions lie at the intersection of 2D materials, nanoelectronics, and flexible device engineering. With over 9,566 citations, 231 publications, and an h-index of 46, his research has profoundly influenced advanced materials and next-generation electronic systems. His work encompasses high-mobility transistors, flexible OLED and micro-LED displays, nanostructured memristors, neuromorphic sensors, and anticounterfeiting technologies based on MoS₂, WS₂, and transition metal dichalcogenides (TMDs). His studies have been featured in Nature Electronics, Nature Communications, Advanced Materials, ACS Nano, and Advanced Functional Materials, many highlighted as cover articles, reflecting the high impact of his research. Prof. Dr. Sunkook Kim’s R&D achievements bridge fundamental material synthesis and device integration, leading innovations in stretchable electronics, haptic feedback systems, and large-area 2D semiconductor devices. He has developed laser-assisted fabrication techniques and MoS₂-based biosensors for healthcare and optoelectronic applications, fostering sustainable and low-power device technologies. A recipient of the Korean President’s Young Scientist Award and the Scientist of the Month Award by the National Research Foundation of Korea, he has earned national recognition for his research excellence. His academic leadership extends to editorial board service, peer reviewing for top-tier journals, and conference chairing in nanotechnology and materials science forums. Prof. Dr. Sunkook Kim’s laboratory at Sungkyunkwan University is a hub of interdisciplinary collaboration, supported by multiple national and industrial funding projects, advancing Korea’s competitiveness in nanomaterials research and flexible electronics. His continuing innovations are redefining frontiers in next-generation semiconductors, photonic devices, and intelligent sensing systems.

Profiles: Scopus | ORCID | Google Scholar | ResearchGate | Sci Profiles | IEEE Xplore

Featured Publications

1. Kim, S., Konar, A., Hwang, W. S., Lee, J. H., Lee, J., Yang, J., Jung, C., Kim, H., … (2012). High-mobility and low-power thin-film transistors based on multilayer MoS₂ crystals. Nature Communications, 3(1), 1011.

2. Choi, W., Cho, M. Y., Konar, A., Lee, J. H., Cha, G. B., Hong, S. C., Kim, S., Kim, J., … (2012). High‐detectivity multilayer MoS₂ phototransistors with spectral response from ultraviolet to infrared. Advanced Materials, 24(43), 5832–5836.

3. Liu, N., Kim, P., Kim, J. H., Ye, J. H., Kim, S., & Lee, C. J. (2014). Large-area atomically thin MoS₂ nanosheets prepared using electrochemical exfoliation. ACS Nano, 8(7), 6902–6910.

4. Kim, S., Kwon, H. J., Lee, S., Shim, H., Chun, Y., Choi, W., Kwack, J., Han, D., … (2011). Low-power flexible organic light-emitting diode display device. Advanced Materials, 23(31), 3511–3516.

5. Lee, J., Dak, P., Lee, Y., Park, H., Choi, W., Alam, M. A., & Kim, S. (2014). Two-dimensional layered MoS₂ biosensors enable highly sensitive detection of biomolecules. Scientific Reports, 4(1), 7352.

 

Shang Zhou | Nanophotonics and Nanoelectronics | Best Researcher Award

Published on by Nano Technology

Mr. Shang Zhou | Nanophotonics and Nanoelectronics | Best Researcher Award

Graduate Student | Gannan Medical University | China

Mr. Shang Zhou is an emerging researcher whose academic pursuits converge at the intersection of medicine, nanomaterials, and semiconductor physics. His core research focus lies in investigating contact characteristics, interface modulation, and the physical mechanisms of van der Waals heterostructures, particularly those involving graphene and gallium nitride (GaN). By integrating theoretical modeling and experimental validation, his work aims to enhance the performance of electronic and optoelectronic devices through optimized heterojunction structures. His major research contribution includes the project “Research on the Contact Characteristics of Graphene/GaN Heterojunction,” which explores how GaN crystal orientation and surface conditions influence contact behaviors in graphene-based systems. This study offers insights into the design of next-generation semiconductor and nanodevice architectures. His publication in Applied Surface Science (SCI-indexed, Vol. 713, 2025) further underscores his role in bridging fundamental materials science with practical device engineering. Mr. Shang Zhou’s innovative capacity is reflected in his extensive intellectual property portfolio, comprising 12 patents—including several invention patents on graphene/GaN interface regulation methods, semiconductor cleaning technologies, and adhesive removal techniques. His patents also extend to applied innovations such as anti-drowning self-rescue devices and photoelectric sensor systems, demonstrating his versatility and translational approach to technology development. Additionally, he holds two software copyrights related to digital safety education and dispute mediation platforms, showcasing his interdisciplinary engagement across science and societal applications. His Scopus metrics indicate 4 research documents with 3 citations and an h-index of 1, representing early yet promising contributions in high-impact research domains. Through his continuous work in nanostructured materials, heterojunction device optimization, and applied nanotechnology, Mr. Shang Zhou exemplifies a researcher dedicated to advancing the frontiers of semiconductor interface physics and nanomaterial-based biomedical engineering.

Profiles: Scopus | ORCID | Scilit

Featured Publications

1. Zhou, S., Meng, Y., Li, J., Cheng, Y., Bao, X., Wang, Z., Deng, H., Yang, Y., Chen, P., Chen, Y., Ouyang, F., Wang, Q., & Zhong, H. (2025). The impact of GaN crystal orientation on the contact properties of single-layer graphene/GaN: A theoretical and experimental study. Applied Surface Science, 713, 164305.

2. Meng, Y., Du, X., Zhou, S., Li, J., Feng, R., Zhang, H., Xu, Q., Zhao, W., Liu, Z., & Zhong, H. (2024). Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells. Molecules, 29(18), 4439.

Prof. Dr. Plamen Petkov | Nanoelectronics Awards | Best Researcher Award

Published on by Nano Technology

Prof. Dr. Plamen Petkov | Nanoelectronics Awards | Best Researcher Award

Prof. Dr. Plamen Petkov , UCTM , Bulgaria

Plamen Petkov, a Bulgarian national born on January 8, 1959, is a distinguished Professor of Physics at the University of Chemical Technology and Metallurgy in Sofia, Bulgaria. With a career spanning from 1985 to the present, he currently serves as the Head of the Thin Films Technology Laboratory and the Physics Department. Petkov holds a Dipl. Eng. (MSc in Semiconductors) from UCTM Sofia and a PhD in Solid State Physics. His extensive experience includes research stints at RWTH Aachen and the University of Odense, specializing in Thin Film Technology. A prolific author, Petkov has published six books and over 165 papers. He is a member of several scientific societies and has coordinated numerous research projects and academic programs. Additionally, he is the Editor in Chief of the journal “Advance in Natural Science: Theory and Applications.” His scientific interests focus on chalcogenide thin films, nanostructured materials, and energy and optical storage.

Professional Profile:

Google Scholar

📚Education:

Plamen Petkov holds an MSc in Semiconductors from the University of Chemical Technology and Metallurgy in Sofia, Bulgaria (1976-1981). He further specialized in Thin Film Technology at the Physics Department of RWTH Aachen in Germany (1993-1995) and earned a PhD in Solid State Physics from the same university in 1995. Additionally, he undertook specialization in Thin Film Technology at the University of Odense in Denmark (1998-1999) and Thin Films at the University of Aachen in Germany (2001-2002)

🏢🔬Work Experience:

Plamen Petkov has been an integral part of the University of Chemical Technology and Metallurgy in Sofia, Bulgaria since 1985. Initially starting as a Researcher and Professor in Physics, his expertise in the field has been instrumental in shaping the academic landscape. Since 2000, he has taken on the role of Head of Laboratory at the Thin Films Technology Lab, where his leadership has propelled research endeavors forward. Additionally, since 2009, he has assumed the responsibility of leading the Physics Department, overseeing its academic and administrative facets. In these roles, Plamen has been pivotal in supervising research initiatives, contributing to the faculty board and academic council, and spearheading numerous national and international research projects. His commitment to academic excellence is further demonstrated through his supervision of Ph.D. and M.S. theses, ensuring the growth and development of future scientists in the field.

Publication Top Notes:

  1. Title: An interpretation of optical properties of oxides and oxide glasses in terms of the electronic ion polarizability and average single bond strength
    • Published Year: 2010
    • Journal: J. Univ. Chem. Technol. Metall
    • Cited By: 523
  2. Title: Measurement of the cross section and angular correlations for associated production of a Z boson with b hadrons in pp collisions at √s = 7 TeV
    • Published Year: 2013
    • Journal: Journal of High Energy Physics
    • Cited By: 214*
  3. Title: Electrode-limited currents in the thin-film MGeSeM system
    • Published Year: 1989
    • Journal: Materials Chemistry and Physics
    • Cited By: 198
  4. Title: Measurement of the associated production of a single top quark and a Z boson in pp collisions at √s= 13 TeV
    • Published Year: 2018
    • Journal: Physics Letters B
    • Cited By: 132
  5. Title: Suppression of γ and Z production in PbPb collisions at √s= 2.76 TeV
    • Published Year: 2017
    • Journal: Physics Letters B
    • Cited By: 123