Muhammad Ejaz Khan | Computational Nanotechnology | Research Excellence Award

Assoc. Prof. Dr. Muhammad Ejaz Khan | Computational Nanotechnology | Research Excellence Award

Associate Professor | Pak-Austria Fachhochschule Institute of Applied Sciences and Technology (PAF-IAST) | Pakistan

Assoc. Prof. Dr. Muhammad Ejaz Khan is a distinguished computational nanotechnology researcher with over 605 citations, 49 publications, an h-index of 12, and an i10-index of 14. His research spans advanced quantum simulations, density functional theory, effective-mass modeling, and high-performance computing for designing next-generation electronic, optoelectronic, and renewable-energy devices. He has made influential contributions to the study of hybrid halide perovskites, graphene/boron nitride heterostructures, thermoelectric nanomaterials, and spin-dependent transport phenomena. A key component of his work includes the development of cutting-edge quantum computational tools and simulation platforms, including contributions to a multidimensional quantum-dot modeling system and atomistic heat-transport software interfaced with leading DFT engines. His publications in ACS Nano, Advanced Functional Materials, J. Mater. Chem. A, Nano Convergence, and FlatChem demonstrate high-impact findings in defect engineering, environmental stability, interfacial thermal resistance, and novel negative differential resistance mechanisms. Assoc. Prof. Dr. Muhammad Ejaz Khan’s research portfolio includes funded international and national projects focused on low-dimensional materials, perovskite stability, nonlinear device architectures, and AI-powered assistive biomedical systems. His innovations have led to two patents related to perovskite-based NDR devices. He has earned multiple research awards, served as a reviewer and editorial contributor, and delivered invited talks at APS, MRS, KPS, and E-MRS, reinforcing his global impact in computational materials science.

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Yuxin Yang | Computational Nanotechnology | Research Excellence Award

Dr. Yuxin Yang | Computational Nanotechnology | Research Excellence Award

Postdoctor Researcher | Eastern Institute of Technology | China

Dr. Yuxin Yang is a computational materials scientist whose research advances the fundamental understanding of ultrafast carrier dynamics, defect physics, and semiconductor design for high-performance optoelectronic systems. His work combines first-principles theory with non-adiabatic molecular dynamics to uncover how point defects, vacancies, and excited-state interactions govern recombination pathways and nonradiative losses in wide-bandgap semiconductors. His influential publications in Physical Review Letters, The Journal of Physical Chemistry Letters, Materials Today Physics, and Computational Materials Science highlight breakthroughs in carrier injection asymmetry, defect-induced trapping, and hot-carrier cooling mechanisms that directly impact the efficiency of III-nitride LEDs and related devices. Dr. Yuxin Yang has contributed significantly to predictive semiconductor modelling, elucidating interlayer charge-transfer dynamics in hBN/graphene heterostructures and guiding the design principles of β-Ga₂O₃, AlN, and B-containing nitrides. His work on lanthanide-regulated Mn⁴⁺/Mn²⁺ self-reduction and luminescent sensing materials further demonstrates versatility across optical and functional materials research. With 57 google scholar citations, an h-index of 4, and an i10-index of 2, his growing scholarly influence is supported by impactful theoretical findings, a patent on wide-bandgap nitride quantum-well structures, and active contributions to R&D-driven materials engineering. He regularly engages in peer-review service, conference presentations, and scientific community initiatives, reinforcing his role in advancing next-generation semiconductor and photonic technologies.

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