Postdoctor Researcher | Eastern Institute of Technology | China
Dr. Yuxin Yang is a computational materials scientist whose research advances the fundamental understanding of ultrafast carrier dynamics, defect physics, and semiconductor design for high-performance optoelectronic systems. His work combines first-principles theory with non-adiabatic molecular dynamics to uncover how point defects, vacancies, and excited-state interactions govern recombination pathways and nonradiative losses in wide-bandgap semiconductors. His influential publications in Physical Review Letters, The Journal of Physical Chemistry Letters, Materials Today Physics, and Computational Materials Science highlight breakthroughs in carrier injection asymmetry, defect-induced trapping, and hot-carrier cooling mechanisms that directly impact the efficiency of III-nitride LEDs and related devices. Dr. Yuxin Yang has contributed significantly to predictive semiconductor modelling, elucidating interlayer charge-transfer dynamics in hBN/graphene heterostructures and guiding the design principles of β-Ga₂O₃, AlN, and B-containing nitrides. His work on lanthanide-regulated Mn⁴⁺/Mn²⁺ self-reduction and luminescent sensing materials further demonstrates versatility across optical and functional materials research. With 57 google scholar citations, an h-index of 4, and an i10-index of 2, his growing scholarly influence is supported by impactful theoretical findings, a patent on wide-bandgap nitride quantum-well structures, and active contributions to R&D-driven materials engineering. He regularly engages in peer-review service, conference presentations, and scientific community initiatives, reinforcing his role in advancing next-generation semiconductor and photonic technologies.
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